SSR1N60B |
RFQ for SSR1N60B Required Field |
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| Technical/Catalog Information | SSR1N60BTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 900mA |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 450mA, 10V |
| Input Capacitance (Ciss) @ Vds | 215pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 7.7nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SSR1N60BTM SSR1N60BTM |
| Product | Manufacturers | Pack | D/C |
| SSR1N60B | - | - | - |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features |
| • 0.9A, 600V, R DS(on) = 12Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability |
| Symbol | Parameter | SSR1N60B / SSU1N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.9 | A |
| 0.57 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 3.0 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 50 | mJ |
| IAR | Avalanche Current (Note 1) | 0.9 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 2.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
2.5 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
28 | W | |
| 0.22 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
